| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the strength of a thin film structure securable in a flow sensor. SOLUTION: In the flow sensor provided with a semiconductor substrate 1 having a hollow 1a; and a diaphragm (thin film structure) 10 of a flow rate detector, composed of a plurality of laminated insulation films 11, 12, 13, 14 provided on the hollow 1a of the substrate 1, at least either uppermost or lowermost layer 14, 11 of the insulation films 11-14 of the diaphragm 10 is a film with reduced pin-holes P.</p> |
