发明名称 SINGLE CRYSTAL PULLING APPARATUS, ITS METHOD AND PROGRAM AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To adequately control the operation for growing a semiconductor single crystal by the Czochralski method by precisely determining the geographical shape of a growing semiconductor single crystal from the image of the boundary of the crystal and the melt. SOLUTION: An original image of a single crystal pulling apparatus 10 captured by a camera 18 is read from a storage unit 19, and a converted image representing a virtual image viewed from the direction parallel with the pulling shaft P is created from the data. Information regarding the geographical shape of the semiconductor crystal S such as the diameter R and the position of the center C is obtained by means of an image processing unit 20. A control unit 21 controls the heater 15, the pulling apparatus 16 and the crucible lifting device 17 based on the information obtained.
申请公布号 JP2003012395(A) 申请公布日期 2003.01.15
申请号 JP20010197316 申请日期 2001.06.28
申请人 MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS SILICON CORP 发明人 OI SOTARO
分类号 C30B15/26;(IPC1-7):C30B15/26 主分类号 C30B15/26
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