发明名称 |
SINGLE CRYSTAL PULLING APPARATUS, ITS METHOD AND PROGRAM AND RECORDING MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To adequately control the operation for growing a semiconductor single crystal by the Czochralski method by precisely determining the geographical shape of a growing semiconductor single crystal from the image of the boundary of the crystal and the melt. SOLUTION: An original image of a single crystal pulling apparatus 10 captured by a camera 18 is read from a storage unit 19, and a converted image representing a virtual image viewed from the direction parallel with the pulling shaft P is created from the data. Information regarding the geographical shape of the semiconductor crystal S such as the diameter R and the position of the center C is obtained by means of an image processing unit 20. A control unit 21 controls the heater 15, the pulling apparatus 16 and the crucible lifting device 17 based on the information obtained.
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申请公布号 |
JP2003012395(A) |
申请公布日期 |
2003.01.15 |
申请号 |
JP20010197316 |
申请日期 |
2001.06.28 |
申请人 |
MITSUBISHI MATERIALS CORP;MITSUBISHI MATERIALS SILICON CORP |
发明人 |
OI SOTARO |
分类号 |
C30B15/26;(IPC1-7):C30B15/26 |
主分类号 |
C30B15/26 |
代理机构 |
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