发明名称 |
PRODUCTION METHOD FOR 13 GROUP ELEMENT NITRIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To produce a 13 group element nitride crystal excellent in crystallinity such as GaN in the condition with little danger. SOLUTION: The production method for the 13 group element nitride crystal is as follows; a metal and/or a compound containing at least a kind of 13 group elements and two or more moles of an alkali metal amide to the metal and/or the compound containing the 13 group element are heated in an airtight vessel in an inert gas atmosphere. After the alkali metal amide is melted, then cooling down.
|
申请公布号 |
JP2003012309(A) |
申请公布日期 |
2003.01.15 |
申请号 |
JP20010195511 |
申请日期 |
2001.06.27 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
TABATA HIDEO;KUBO TOMOYA;MAKINO KENYA |
分类号 |
C01B21/06;C01B21/064;C01B21/072;(IPC1-7):C01B21/06 |
主分类号 |
C01B21/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|