发明名称 PRODUCTION METHOD FOR 13 GROUP ELEMENT NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To produce a 13 group element nitride crystal excellent in crystallinity such as GaN in the condition with little danger. SOLUTION: The production method for the 13 group element nitride crystal is as follows; a metal and/or a compound containing at least a kind of 13 group elements and two or more moles of an alkali metal amide to the metal and/or the compound containing the 13 group element are heated in an airtight vessel in an inert gas atmosphere. After the alkali metal amide is melted, then cooling down.
申请公布号 JP2003012309(A) 申请公布日期 2003.01.15
申请号 JP20010195511 申请日期 2001.06.27
申请人 NICHIA CHEM IND LTD 发明人 TABATA HIDEO;KUBO TOMOYA;MAKINO KENYA
分类号 C01B21/06;C01B21/064;C01B21/072;(IPC1-7):C01B21/06 主分类号 C01B21/06
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