| 摘要 |
PURPOSE: To provide a manufacturing method and manufacturing device of a semiconductor device with improved reliability and an yield in the formation process of semiconductor device wiring composed of a copper layer and a porous low dielectric constant insulation film (porous LOW-K film), avoiding the moisture absorption of the porous LOW-K film and avoiding peeling-off of a TEOS film (SiO2 film) from a stopper film (SiN film) on the film. CONSTITUTION: A sample (wafer) is consistently dried inside an evacuated processing chamber without exposing it to the atmosphere, and the moisture absorption of the porous LOW-K film 5 is avoided. Also, a liquid chemical cleaning process (process 21) including pure water cleaning is provided after a CMP processing in a process 20. Thus, fluorine remaining in the TEOS film 6 is cleaned and removed, and the adhesion decline of the stopper film 4 newly deposited on a mask material layer (TEOS film) 6 in the next second layer wiring formation process due to the residual fluorine is avoided.
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