发明名称 |
Substrate including wide low-defect region for use in semiconductor element |
摘要 |
<p>In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.</p> |
申请公布号 |
EP1276140(A2) |
申请公布日期 |
2003.01.15 |
申请号 |
EP20020014735 |
申请日期 |
2002.07.03 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
FUKUNAGA, TOSHIAKI;KUNIYASU, TOSHIAKI;WADA, MITSUGU;HOTTA, YOSHINORI |
分类号 |
C30B25/02;C30B25/18;H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|