| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film-forming apparatus, which enables rapid film formation even when using a liquid raw material with low vapor pressure, and rapidly can form a metal oxide thin-film such as titania and zircon, a metal nitride thin-film such as silicon nitride and titanium nitride, and a metal thin-film such as aluminum and titanium. SOLUTION: This plasma film-forming apparatus comprises generating plasma under a high pressure such as atmospheric pressure by a drum-shaped rotating electrode 101, and coating a substrate 102 with the liquid raw material including elements constituting the thin film by a raw material coating means 105, before the substrate 102 arrives at a plasma region. Then, the apparatus can supply a large quantity of raw material gas to plasma, by coating the substrate 102 with the above liquid raw material and vaporizing it when employing the above liquid raw material even with the low vapor pressure.
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