发明名称 |
Dual hardmask process for the formation of copper/low-K interconnects |
摘要 |
<p>The invention describes a method for forming integrated circuit interconnects using a dual hardmask dual damascene process. A first hardmask layer (50) and a second hardmask layer (60) are formed over a low k dielectric layer (40). The trench pattern is first defined by the second hardmask and via pattern is then defined by the first hardmask. Any interaction between low k dielectrics (40) and the photoresist (80) at patterning is prevented. The BARC and photoresist may be stripped before the start of the dielectric etching such that the low k dielectric material is protected by the hardmasks during resist strip. <IMAGE></p> |
申请公布号 |
EP1276147(A2) |
申请公布日期 |
2003.01.15 |
申请号 |
EP20020100795 |
申请日期 |
2002.07.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
XING, GUOQIANG;BRENNAN, KENNETH D.;JIANG, PING |
分类号 |
H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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