CRYSTAL GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To prevent a first dislocation generation of a pulled crystal caused by applying voltage between the pull shaft and the raw material melt. SOLUTION: The voltage applied between the pull shaft 3 and the raw material melt is kept at >=-50 V and <=+50 V at least during the time when the seed crystal 11 touches the raw material melt 10 and the formation of a crystal body is completed. Preferably a voltage of -50 to 0 V is applied to the pull shaft 3 and the raw material melt 10 is grounded.