| 摘要 |
PURPOSE: A method for reducing particles inside plasma etching chamber during metal etching process is provided to prevent particles of other precious metal such as iridium or platinum generated during metal etching process from having a bad effect upon succeeding metal etching process in the plasma etching chamber. CONSTITUTION: In a method for preventing particles of Ir generated inside plasma etching chamber in the process of etching Ir layer or Ir compound layer from having a bad effect upon succeeding etching process, the method comprises the steps of injecting a seasoning mixed gas including at least two gases selected from the group consisting of BCl3, HBr, CF4 and Ar into the plasma etching chamber; and maintaining the generated plasma by generating plasma in the plasma etching chamber, wherein the method further comprises the step of arranging dummy wafer having at least one Ir layer in the plasma etching chamber before injecting the seasoning mixed gas into the plasma etching chamber, wherein the method further comprises the step of cleaning the plasma etching chamber using purge gas before the step of injecting the seasoning mixed gas into the plasma etching chamber, and wherein the method further comprises the step of removing the remained seasoning mixed gas from the plasma etching chamber after the step of maintaining the generated plasma by generating plasma in the plasma etching chamber.
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