| 摘要 |
PURPOSE: The method for reducing pattern dimension in photoresist layer is provided to smoothly shrink the resist pattern by the heat treatment when a fine resist pattern is to be formed by heat shrinking a resist pattern formed from a photoresist and easily remove the resist by washing with water after the heat treatment of the resist pattern. CONSTITUTION: A coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water.
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