发明名称 |
Charge beam exposure apparatus, charge beam exposure method, and charge beam exposure mask |
摘要 |
There are provided a second aperture having a beam adjustment opening group and a pattern exposure opening group, a stage for mounting a wafer to which a pattern should be transferred, and a control computer for controlling an electron beam to be irradiated onto the wafer. The control computer has a drawing parameter table which stores an optimum beam adjustment parameter for an electron beam using a pattern density as a parameter. A pattern is transferred by selecting an optimum beam adjustment parameter corresponding to the pattern density from the drawing parameter table for each pattern.
|
申请公布号 |
US6507034(B1) |
申请公布日期 |
2003.01.14 |
申请号 |
US20000658506 |
申请日期 |
2000.09.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKASUGI TETSURO |
分类号 |
H01J37/305;G03F7/20;H01J37/317;H01L21/027;(IPC1-7):H01J37/304 |
主分类号 |
H01J37/305 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|