发明名称 |
Growth of epitaxial semiconductor material with improved crystallographic properties |
摘要 |
A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.
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申请公布号 |
US6506667(B2) |
申请公布日期 |
2003.01.14 |
申请号 |
US20000735026 |
申请日期 |
2000.12.11 |
申请人 |
SEH AMERICA, INC. |
发明人 |
BOYDSTON MARK R.;DIETZE GERALD R.;KONONCHUK OLEG V. |
分类号 |
C30B25/16;C23C16/24;C30B25/02;C30B25/18;C30B29/06;H01L21/205;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
C30B25/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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