发明名称 |
System and method for X-ray reflectometry measurement of low density films |
摘要 |
A metrology system and method for measuring the thickness of thin-films of semiconductor wafer. This system and method analyze x-ray reflectivity data to determine transmission characteristics of thin-film layers. Based on these transmission characteristics the thickness of the thin-layer can be determined. Unlike some prior systems and methods, the system and method herein does not determine the thickness of the thin-film layer based on a fringe pattern in reflectivity for the thin-film layer. The fact that the system and method herein does not rely the fringe pattern is particularly advantageous in situations where the thin-film layer is of thickness which makes it very difficult to resolve the fringe pattern in the reflectivity data.
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申请公布号 |
US6507634(B1) |
申请公布日期 |
2003.01.14 |
申请号 |
US20020067604 |
申请日期 |
2002.02.04 |
申请人 |
THERMA-WAVE, INC. |
发明人 |
KOPPEL LOUIS N.;JOHNSON WILLIAM |
分类号 |
G01B15/02;G01N23/20;(IPC1-7):G01N23/06 |
主分类号 |
G01B15/02 |
代理机构 |
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