发明名称 |
Method for measuring the depth of well |
摘要 |
The present invention is directed to an effective and relatively inexpensive way to measuring the depth of a well in a semiconductor device. In accordance with an aspect of the present invention, a method for measuring the depth of a well of a substrate comprises providing a substrate having a well therein and a cut through a depth of the well. The substrate is exposed to an etchant to reveal a discontinuity in a boundary at the depth of the well. The depth of the well is measured at the boundary by scanning electron microscopy (SEM) or other suitable techniques.
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申请公布号 |
US6506615(B2) |
申请公布日期 |
2003.01.14 |
申请号 |
US20020074852 |
申请日期 |
2002.02.11 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
CHEN JEN-TE;JAW KOU-LIANG |
分类号 |
H01L21/306;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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