| 摘要 |
PURPOSE: An apparatus for etching a thin film using plasma is provided to uniformly etch the front surface of a substrate by making injected cooling gas uniformly cool the substrate while the cooling gas flows through an X-shaped groove for cooling gas and a square groove. CONSTITUTION: A gas injection pipe is installed in the upper surface of a chamber. The upper surface of an upper electrode is connected to the gas injection pipe while the upper electrode functions as an anode. A lower electrode(104) is installed under the upper electrode, separated from the upper electrode by a predetermined interval and functioning as a cathode. The substrate is placed on the lower electrode. Cooling gas is filled in a cooling space part in contact with the lower surface of the substrate. A cooling gas injection path is connected to the cooling space part.
|
