| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
| 摘要 |
PURPOSE: A semiconductor device is provided to decrease an off-current value by using a semiconductor film having a flat main surface as an active layer such that the semiconductor film has not only high planarization but also a high crystal orientation rate. CONSTITUTION: The semiconductor film(5) having a flat main surface is formed by crystallizing a silicon film(3) containing(several percent of or preferably 0.1-10 atoms of) germanium and irradiating the film with a laser beam, wherein the flat main surface has an RMS value less than 10 nanometer as a surface roughness and a P-V value less than 70 nanometer.
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| 申请公布号 |
KR20030004111(A) |
申请公布日期 |
2003.01.14 |
| 申请号 |
KR20020037876 |
申请日期 |
2002.07.02 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
KASAHARA KENJI;YAMAZAKI SHUNPEI |
| 分类号 |
H01L21/20;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
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