| 摘要 |
In order to provide a semiconductor device which has a bonding layer capable of providing electrical continuity between the cap and the semiconductor substrate, the semiconductor device comprises a semiconductor substrate whereon an element is formed on one principal plane thereof and a cap which hermetically seals the element so that a space is formed over the element, while the element is sealed by bonding a laminated bonding layer, which is formed around the element provided on the principal plane, and an Ni layer formed on the cap, wherein the laminated bonding layer is constituted from a first polysilicon layer which is doped with an impurity, an insulation layer and a second polysilicon layer which is not doped with an impurity, while the first polysilicon layer and the second polysilicon layer contact with each other in a part thereof so that the impurity diffuses through the contact area from the first polysilicon layer into the second polysilicon layer.
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