发明名称 Photolithographic method for fabricating organic light-emitting diodes
摘要 A method of photolithographically patterning an organic semiconductor device, comprising the steps of protecting the organic layer of the device by depositing a metal layer thereon, depositing and patterning a photoresist layer on said metal layer, and selectively etching the exposed areas to pattern said metal layer and said organic layer. Specifically, the disclosed method provides the photolithographic fabrication of organic light emitting diodes (OLEDs) and organic lasers diodes (OLDs).
申请公布号 US6506616(B1) 申请公布日期 2003.01.14
申请号 US20000714472 申请日期 2000.11.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KIM TAE S.;CELII FRANCIS G.;JACOBS SIMON J.
分类号 H01L51/40;H01L51/52;H01L51/56;(IPC1-7):H01L21/00 主分类号 H01L51/40
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