发明名称 |
Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
摘要 |
An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.
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申请公布号 |
US6506665(B1) |
申请公布日期 |
2003.01.14 |
申请号 |
US20000685738 |
申请日期 |
2000.10.11 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO NOBUHIKO |
分类号 |
H01L21/00;H01L21/324;H01L21/762;(IPC1-7):H01L21/46 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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