METHOD FOR OPENING REPAIR FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for opening a repair fuse of a semiconductor device is provided to stably open the repair fuse by forming an upper plate electrode and a blocking insulation layer in a cell area and a fuse area. CONSTITUTION: A lower electrode(234) is formed on a semiconductor substrate. A dielectric layer(236) is formed on the substrate. The upper plate electrode(238) and the blocking insulation layer(242) are formed in the cell area. A blocking layer composed of the upper plate electrode and the blocking insulation layer is formed in the fuse area. An interlayer dielectric is deposited. The interlayer dielectric in the cell and fuse areas is etched until the blocking insulation layer is exposed. A contact hole penetrating the interlayer dielectric and the substrate is formed. A metal contact(246) is formed. The first metal interconnection(248) electrically connected to the metal contact is formed. An interconnection insulation layer(250) is formed. A via hole connected to the first metal interconnection penetrates the interconnection insulation layer. The interconnection insulation layer on the blocking insulation layer in the fuse area is etched. A via contact is formed. The second metal interconnection(256) electrically connected to the via contact is formed. A passivation oxide layer(258) and a passivation nitride layer(260) are formed on the substrate. The passivation oxide layer and the passivation nitride layer on the blocking insulation layer in the fuse area are etched until the blocking insulation layer is exposed. The blocking layer in the exposed fuse area is etched.