| 摘要 |
Silicon is removed from germanium ingots by melting, either zone or complete melting, in an oxidizing atmosphere having an oxygen partial pressure of 0.001-0.1 atmosphere whereby the silicon oxide formed floats to the melt surface and is removed. Traces of Ca, Mg, and Al present are simultaneously oxidized and removed. Preferably oxygen, carbon dioxide, or steam diluted with hydrogen, nitrogen or an inert gas is used to form a mixture containing 0.01-10.0% by volume of the oxidizing gas. Any residual oxygen in the treated germanium is removed by remelting in hydrogen. |
