发明名称 |
Circuital structure for programming data in a non-volatile memory device |
摘要 |
A circuit structure for programming data in reference cells of an electrically programmable/erasable integrated non-volatile memory device includes a matrix of multi-level memory cells and a corresponding reference cell provided for comparison with a respective memory cell during the read phase. The reference cell is incorporated, along with other cells of the same type, in a reference cell sub-matrix which is structurally independent of the memory cell matrix and directly accessed from outside in the DMA mode. The bit lines of the sub-matrix branch off to a series of switches which are individually operated by respective control signals REF(i) issued from a logic circuit with the purpose of selectively connecting the bit lines to a single external I/O terminal through a single addressing line of the access DMA mode.
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申请公布号 |
US6507517(B2) |
申请公布日期 |
2003.01.14 |
申请号 |
US20010871235 |
申请日期 |
2001.05.30 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ROLANDI PAOLO;MONTANARO MASSIMO;ODDONE GIORGIO |
分类号 |
G11C11/56;G11C16/28;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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