NON-VOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING T METHOD THEREFOR

摘要

PURPOSE: To provide a non-volatile semiconductor memory having a structure which relaxes the difficulty in reducing the resistance of wiring which accompanies micronization of the non-volatile semiconductor memory. CONSTITUTION: The non-volatile semiconductor memory comprises a memory cell transistor of stack gate type. The control gate of the memory cell transistor comprises a metal 29 embedded in a groove 25.