| 摘要 |
PURPOSE: A method for fabricating a transistor using a trench gate is provided to obtain sufficiently the length of a channel by forming a gate line using a trench of a silicon substrate. CONSTITUTION: A nitride layer(3) and an oxide layer for gate trench are formed on the first conductive type silicon substrate(1). A gate formation region of the silicon substrate(1) is exposed by patterning the oxide layer for gate trench. An LDD region(7) is formed by implanting the second conductive type ions. A nitride layer is deposited on an entire surface of the silicon substrate(1). A gate spacer(8) is formed on a side of an oxide layer pattern for gate trench by etching the nitride layer(3). A trench is formed by etching partially the silicon substrate(1). A gate oxide layer(9) and a conductive layer are deposited on the silicon substrate(1). A gate(10) is formed by etching the conductive layer. An oxide layer is removed from a sidewall of the gate spacer(8). The second conductive type source/drain is formed by the second conductive type ions on the silicon substrate(1).
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