| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin valve thin film magnetic element that is excellent in heat resistance and corrosion resistance and provided with a bias structure in which the direction of magnetization of a free magnetic layer can be arranged properly. SOLUTION: The spin valve thin film magnetic element has an antiferromagnetic layer, a fixed magnetic layer, a free magnetic layer formed on the fixed magnetic layer through a nonmagnetic conductive layer, soft magnetic layers arranged on the free magnetic layer at the interval corresponding to a track width, bias layers formed on the soft magnetic layers, and conductive layers formed on the bias layers on a substrate. The antiferromagnetic layer and bias layers are composed of alloys expressed by the compositional formula of Ptm Mn100-m and the (m) indicating the percentage composition of the alloy constituting the bias layer is adjusted to meet 52 at.%<=m<=60 at.% and the (m) indicating the percentage composition of the alloy constituting the antiferromagnetic layer is adjusted to meet 48 at.%<=m<=58 at.%.
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