Deposition of layer of conducting material comprises cathodic spraying under vacuum of indium oxide target doped with tin under voltage excited plasma of nitrogen and at least one rare gas

摘要

The deposition of a layer of conducting material is carried out by cathodic spraying under vacuum of an indium oxide target doped with tin under voltage excitation of a plasma obtained from a gas mixture of nitrogen and at least one rare gas belonging to the following group: (a) argon; (b) krypton; (c) xenon; and (d) neon.