| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a CMP abrasive which enables polishing of a silicon oxide film to a high planarity and a high speed, without flaws, has a high stability, facilitates process control and is suited for planarizing a shallow trench isolating insulation film, and a substrate polishing method which is available for polishing the silicon oxide film to high planarity and a high speed, without flaws, and suited for planarizing the shallow trench isolating insulation film. SOLUTION: The CMP abrasive for semiconductor insulation films contains cerium oxide grains, a dispersant, polyvinyl pyrrolidone and water. The substrate polishing method comprises pressing a substrate, having a film to be polished to a polishing cloth of a polishing turn and grinding the film with the CMP abrasive fed between the film to be polished and with the polishing cloth, while the substrate is moved relative to the turntable.</p> |
