METHOD FOR LOW-TEMPERATURE SHARPENING OF SILICON-BASED FIELD EMITTER TIP

摘要

PROBLEM TO BE SOLVED: To realize an inexpensive low-temperature process for sharpening the tip part of a silicon-based field emitter. SOLUTION: This low-temperature process is used for sharpening the tip part of the silicon-based field emitter. The tip part 312 of a rough silicon-based field emitter is exposed to a xenon difluoride gas in a process chamber, to implement low-temperature isotropic etching for the tip part of the rough silicon- based field emitter, so that the final sharpened tip part of the field emitter is formed.