发明名称 ELECTROSTATIC CHUCK AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To obtain an electrostatic chuck which has high performance and excellent durability, by preventing deterioration caused by etching of an insulating organic polymer film. SOLUTION: A metallic film electrode 2 is coated with a resin 3 whose main component is vinylidene fluoride and an exposed surface part of the resin film is covered with polytetrafluoroethylene 4. The polytetrafluoroethylene 4 is not etched by fluorine gas ion and radical, and does not produce pinholes because it has low melting point caused by low molecular weight.</p>
申请公布号 JP2003007812(A) 申请公布日期 2003.01.10
申请号 JP20010195256 申请日期 2001.06.27
申请人 KOMATSU LTD 发明人 MATSUKI TERUYUKI;SUGIHARA MIKIHIDE;KADOTANI KANICHI
分类号 H01L21/302;H01L21/3065;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/302
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