| 摘要 |
PURPOSE: A method for fabricating an MML semiconductor device is provided to prevent degradation of a PMOS transistor by performing rapid thermal annealing for the PMOS transistor and an NMOS transistor. CONSTITUTION: An ion implantation process is performed on a source/drain region(115) of an NMOS transistor. A rapid thermal annealing process is performed. The ion implantation process is performed on a source/drain region(155) of a PMOS transistor. A salicide layer is formed on a gate electrode and the source/drain regions(115,155) of a logic semiconductor device(100). An interlayer dielectric is formed on an entire surface of a semiconductor substrate. A source/drain region(205) of a DRAM device(200) is exposed by etching partially the interlayer dielectric. A plug poly is deposited on the exposed region. An insulating layer is formed on the semiconductor substrate. The rapid thermal annealing process is performed on the semiconductor substrate. A bit line contact of the DRAM device(200) and a bit line contact of the logic semiconductor device(100) are formed on the semiconductor substrate. A bit line is formed on the semiconductor substrate.
|
