| 摘要 |
PROBLEM TO BE SOLVED: To increase the junction breakdown voltage of a DRAM which has a hierarchical word line structure. SOLUTION: In a DRAM which has a hierarchical word line structure consisting of main-word lines and sub-word lines, among various word line driving transistors, NMOS transistors 14 for which a higher voltage than a power supply voltage VDD is applied are arranged in a well region 1A for forming memory cells. |
