SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide structures of a plug, a capacitor and a wiring suited for a DRAM hybrid LSI, and a method for manufacturing it. SOLUTION: The structure of the plug is formed of a polysilicon layer and a metal layer thereon. When the plug is applied for connecting a cell transistor with a capacitor in a DRAM hybrid LSI, this metal layer is formed with a common metal material used for plugs of a logic transistor. The capacitor of a memory part is formed in the same height with the first wiring layer of a logic part from a silicon substrate. A laminated structure consisting of a conductive film including titanium and a silica glass thereon is used as a hard mask for etching a noble metal such as platinum.