| 摘要 |
PROBLEM TO BE SOLVED: To form a gate insulating film that suppresses leakage currents caused by tunnel effects while the equivalent thickness of the film is reduced. SOLUTION: A method of manufacturing a semiconductor device includes a step of forming the gate insulating film on a single-crystal silicon substrate 1, a step of forming a conductive film on the insulating film 2, and a step of forming a gate electrode 3 by machining at least the conductive film. The gate insulating film 2 is composed of an aluminum oxide film 2a which is caused to deposit on the substrate 1 by the CVD method and has a film thickness of about 1 nm, a hafnium oxide film 2b which is caused to deposit on the film 2a by the CVD method and has a film thickness of about 4 nm, and an aluminum oxide film 2c which is caused to deposit on the film 2b by the CVD method under the same forming condition as that set to the film 2a and has a film thickness of about 1 nm.
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