| 摘要 |
PROBLEM TO BE SOLVED: To reduce cost, a packaging area and wiring resistance in a semiconductor device where a MOSFET and an SBD are mounted on a same semiconductor chip. SOLUTION: The MOSFET and the SBD are formed on the same semiconductor chip in the state where a source region 23 of the MOSFET and a cathode region 20 of the SBD are internally connected by a conductive section 31, a source/cathode electrode 37 in which the source electrode of the MOSFET and a cathode electrode of the SBD are commonly used, and a drain electrode 11 of the MOSFET and an anode electrode 13 of the SBD diode are insulated and isolated. |
