SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR AND THEIR MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a field effect transistor respectively having SiGe layers which are low in interlayer transition density and surface roughness. SOLUTION: The semiconductor substrate has an Si substrate 1, the SiGe layer SG formed on the surface of the substrate 1, and an implanted region 1a, into which hydrogen ions or helium ions are implanted near the surface of the substrate 1.