METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to avoid the height of the capacitor and simplify a process by using RuO2 as a hard mask instead of an etch process using a poly hard mask. CONSTITUTION: A capacitor oxide(22) is deposited on a substrate. The hard mask made of RuO2 and an anti-reflective coating(ARC) are deposited on the capacitor oxide. A photoresist mask is deposited and patterned on the ARC. The ARC and the RuO2 hard mask are etched by using the patterned photoresist mask through an in-situ process. The capacitor oxide is etched and patterned. The RuO2 hard mask is eliminated.