| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to selectively deposit a copper thin film with a desired deposition rate, and progress deposition reaction on a metal layer. CONSTITUTION: An organic compound coupled with halogen flows onto a substrate. Halogen atom is selectively adsorbed on a metal surface of the substrate. A copper precursor and an inverse-reaction residue flows onto the substrate. A copper thin film is grown on the metal surface.
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