NON-VOLATILE SEMICONDUCTOR MEMORY AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: To reduce a cell area in a flash memory device of a single gate structure. CONSTITUTION: In an active area forming a floating gate electrode on an Si substrate forming a burying dispersion area being a control gate so as to be capacity-coupled through an insulating of the surface of the Si substrate and forming a flash memory cell, an n type dispersion area being a source area and a drain area is formed on both sides of the floating gate electrode.