| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which simplifies the manufacturing process of the semiconductor device in forming a connection hole or an interconnection of the semiconductor device having a multilayer structure. SOLUTION: A primary interconnection layer 10 consisting of an interconnection 10a, an interlayer insulating film 10b and a protection film 10c is formed. An interlayer insulating film 11 and a photosensitive silazane film 12 are formed on the upper surface of the primary interconnection layer 10. Then, photosensitive silazane is selectively irradiated by a beam 13 consisting of electron beam or ultra violet ray and photosensitive silazane is patterned after development by TMAH solution into a mask to form a connection hole or an interconnection. Then, the interlayer insulating film 11 is etched to form a hole to be a connecting hole or an interconnection trench. |
