| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for acquiring and evaluating exposure parameters by which the adjustment of an exposure mask can be carried out in a short time, and a method and system for charged particle beam exposure which are high in productivity. SOLUTION: Electronic signal images related to a reference pattern and a plurality of CP patterns are acquired, based on secondary electrons radiated from the portion to be exposed and modulated by electrostatically charged reference and CP patterns, by projecting a charged particle beam having first incident energy upon an insulating substrate to be exposed through the reference pattern and all selected CP patterns to be calibrated (S4) and scanning a portion to the exposed with a charged particle beam having second incident energy lower than the first incident energy (S5). In addition, exposure parameters for calibration containing at least one of positions, focal points, astigmatism, rotations, and magnifications are found with respect to the selected CP patterns to be calibrated, based on the electronic signal images.
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