| 发明名称 |
PROCEDE DE DIMINUTION DE RUGOSITE DE SURFACE |
| 摘要 |
The invention relates to a method for reducing the rugosity of the free surface of a slice of semiconductor material. Said method comprises an annealing step in order to smooth said free surface. The invention is characterized in that the method for reducing free surface rugosity comprising a single smoothing annealing step which is carried out in the form of rapid thermal annealing in an atmosphere which is exclusively comprised of pure argon. The invention also relates to a structure produced by said method. |
| 申请公布号 |
FR2827078(A1) |
申请公布日期 |
2003.01.10 |
| 申请号 |
FR20010008859 |
申请日期 |
2001.07.04 |
| 申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
NEYRET ERIC;ECARNOT LUDOVIC |
| 分类号 |
H01L21/02;H01L21/26;H01L21/302;H01L21/324;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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