| 摘要 |
PROBLEM TO BE SOLVED: To suppress dielectric films of a capacitor from being reduced. SOLUTION: The semiconductor device of the present invention comprises a lower electrode film 16, a dielectric film 17 formed on the lower electrode film 16, an insulating protective film 18 formed on the dielectric film 17, an upper electrode film 19 selectively formed on the insulating protective film 18 and opposed to the lower electrode film 16, second wiring 28a and 28b formed within fourth and fifth insulating films 22 and 23, a via portion 27a that connects the second wiring 28a and the lower electrode film 16 electrically, and a via portion 27b that connects the second wiring 28b and the upper electrode film 19 electrically. |
