| 摘要 |
PROBLEM TO BE SOLVED: To attain stable operation with low power consumption and low voltage by generating no through current in read, unnecessitating electric power consumed in pre-charge, and performing small amplitude transmission and recycle of electric changes. SOLUTION: In a memory cell, a first load transistor P1 and a second load transistor P2 are connected to a first drive transistor N1 and a second drice transistor N2 in a flip-flop state. A first switch N3 controlled by a word line WL and a second switch N14 activated only in the case of write-in are connected in series to a first storage node V1, and a second switch N14 is connected in series between the first storage node V1 and the first drive transistor N1. When read, a current detecting impedance which varies by a signal potential of the first storage node is injected to a selected bit line pair BL,/BL. |
