| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory provided with a built-in test circuit which can replace a defective memory cell by a redundant memory cell. SOLUTION: A memory cell array 100 is divided into first and second sub- memory cell arrays 100.1 and 100.2. A built-in self-test circuit 2000 is provided with address replacement and determination circuit 3000.1 and 3000.2 which is provided for each of first and second sub-memory cell arrays, in which selection of a memory cell out of the first and the second sub-memory cell arrays and replacement by a spare memory cell can be performed independently each other, and which determines that replacement is performed by which spare memory cell, and outputs a determination result.
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