发明名称 WIDE BAND AMPLIFICATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To enable hybrid constitution by mounting MESFETs or the like for constituting a wide band amplification circuit on a single layer board. SOLUTION: This wide band amplification circuit is provided with a first amplification circuit 25 and a second amplification circuit 26 which are push-pull connected between an input transformer 20 and an output transformer 22 and constituted of a plurality of stages of MESFETs 27a, 27b, 28a, 28b, 29a, 29b. A plurality of stages of the MESFETs, wide band blocking inductors 32a, 32b and other chip components are attached on the single layer board. Gate bias wires 30 of the MESFETs are made to pass under the inductors 32a, 32b.
申请公布号 JP2003008363(A) 申请公布日期 2003.01.10
申请号 JP20010188969 申请日期 2001.06.22
申请人 SANYO ELECTRIC CO LTD 发明人 NAGAMATSU AKIHITO
分类号 H03F1/42;H03F3/26;(IPC1-7):H03F1/42 主分类号 H03F1/42
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