| 摘要 |
PURPOSE: A method for forming an oxide thin film by using an atomic layer deposition method is provided to obtain easily a desired capacitance of an integrated capacitor by performing an atomic layer deposition process using an external heating source. CONSTITUTION: A source is absorbed on a substrate within a chamber. A purge process is performed to remove a non-reaction source from the source. A reaction gas is supplied to the inside of the chamber. The source is reacted with the surface of the reaction gas by providing the heat from a heating source of the outside to the inside of the chamber. The purge process is performed to remove the non-reaction gas and byproducts from the reaction gas. A halogen lamp or a laser device is used as the heating source. The source includes one of Ga, In, Al, Ti, Ta, B, and Si. The reaction gas includes one of oxygen, ozone, H2O, and ammonia.
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