METHOD FOR FORMING TANTALUM OXIDE USING OZONE-PLASMA TREATMENT

摘要

PURPOSE: A method for forming tantalum oxide using ozone-plasma treatment is provided to prevent a leakage current caused by a deficiency of oxygen or defects remaining in a layer. CONSTITUTION: (Ta(OC2H5)5) as tantalum source is deposited on a substrate in a deposition chamber(21-22). N2 gas is supplied to purge a remaining tantalum source and a byproduct(23). Tantalum oxide layer is deposited by exiting O3 plasma in the chamber, removing carbon in the tantalum oxide layer and prevent a deficiency of oxygen(24). Purge gas(N2) is supplied to remove the O3 plasma and the byproduct(25).