| 摘要 |
PURPOSE: A fabrication method of a semiconductor device is provided simultaneously form an operation region and a body contact region by using SEG(Selective Epitaxial Growth) when forming an SOI(Silicon On Insulator) substrate. CONSTITUTION: The first oxide layer(32) as a buried oxide layer, the first nitride layer, the second oxide layer(34) and the second nitride layer are sequentially formed on a semiconductor substrate(31). An operation region as a transistor and a body contact region are formed by selectively etching the second nitride and oxide layer. A polysilicon spacer is formed at inner walls of the pattern, and the first nitride pattern(33a) is formed by etching the first nitride layer using the polysilicon spacer as a mask. An epitaxial growth region is defined to selectively expose the substrate(31) by removing the polysilicon spacer. An epitaxial silicon layer is then grown on the exposed substrate(31) by using SEG.
|
