| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with an exterior connecting electrode, which is only little larger than a planar size of an integrated circuit chip and is located at a wide pitch, at the back, and to provide a method for manufacturing such semiconductor device. SOLUTION: The semiconductor device consists of a flexible wiring substrate 30 where an interior electrode 321 and a portion except for an exterior electrode 322 are covered with an insulation protect film 34, a plurality of wirings 32 include a plurality of the interior electrodes 321 which are formed in the inside corresponding to bumps (electrodes) 1 of an integrated circuit chip S and an exterior electrodes 322 which are formed in the outside, being connected to the interior electrodes 321. The bumps 1 of the integrated circuit chip S are electrically connected to the interior electrodes 321 respectively, the side and back of the integrated circuit chip S are covered with the flexible wiring substrate 30, the exterior electrodes 322 are formed on the back of the integrated circuit chip at a relatively wide pitch as the outside connecting electrode.</p> |
