THIN FILM TRANSISTOR AND DISPLAY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem that a threshold voltage varies with increase in fixed charges due to the rise in the hydrogen concentration in a gate insulation film at hydrogen terminals of defects in a channel region or source-drain region in a hydrogenising process. SOLUTION: The hydrogen concentration in an undercoat contacted to a source-drain region is set to be higher than that in an undercoat contacted to a channel region, to thereby improve the hydrogen terminating effect of the source-drain region and suppress the hydrogen supply to a gate insulation film to a minimum.